• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Near infrared photodetector converting optical radiation into electrical signal, operating at room temperature and utilizing photodiode composed of inorganic semiconductor silicon layer and organic layer, as well as metallic aluminum electrodes, which form electrical contacts between the heterojunction and the external electrical circuit and having a layered structure, where the inorganic and organic layers constitute a hybrid heterojunction, which contains an organic semiconductor material belonging to the functionalized indigoid group, with the LUMO energy level below -4 eV. The heterojunction is made of a layer of 6,6-dinitroindigo deposited onto a silicon substrate. It also beneficial to use indigoids with the substituent groups in the aromatic rings belonging to the nitro or cyanide groups.
    公开号:FI20185973A1
    申请号:FI20185973
    申请日:2018-11-08
    公开日:2020-02-01
    发明作者:Justyna Kocurek；Karolina Miszczyszyn；Grzegorz Babiarz；Michal Dlubek
    申请人:Fibrain Spolka Z Ograniczona Odpowiedzialnoscia；
    IPC主号:
    专利说明:

    Near infrared detector
    20185973 prh 19-11-2018
    The present invention provides a near infrared detector to convert infrared radiation from the near infrared range into electrical signal, operating at room temperature and based on a photodiode composed of inorganic semiconductor silicon layer and organic layer, as well as metallic aluminum electrodes, which form electrical contacts between the heterojunction and the external electrical circuit.
    A device is known from the W02009023881A1 / US2010140661A1 to convert infrared radiation to electric current with a photodiode, which contains two semiconductor layers with heterojunction, each of which are connected to an electrode, and one of them is made of a doped inorganic semiconductor. In order to provide beneficial detection it is proposed that the inorganic semiconductor later forms a heterojunction with an organic semiconductor layer and a cooling device is related to the two semiconductor layers. This approach uses however different organic materials.
    An optoelectronic infrared detector is also known from W02016015077A1 / AT516109A1, which consists of two semiconductor layers, one a doped silicon layer and organic semiconductor layer, where each layer is connected to one electrode and the two layers form a heterojunction. In order to achieve performance the organic semiconductor layer is deposited on a nanostructured and/or microstructured surface of the silicon layer and covers the whole aforementioned surface.
    Also, a device is known from EP2816625A1 to convert infrared radiation to electric current or electric voltage, in particular operating at room temperature, which constitutes a hybrid semiconductor photodiode containing a joining of inorganic semiconductor material (for example silicon) and an inorganic semiconductor material, as well as appropriate metal electrodes providing electrical contacts between each of the heterojunction constituent parts and an external electric circuit wherein the organic material is Quinacridone (5,12-Dihydroquino[2,3-b]acridine-7,14-dione) and the top metal electrode connecting the aforementioned organic layer with an external electric layer has area of lmm2 or less. The manufacturing process of the aforementioned device is characterized in that the deposition of the organic layer occurs through evaporation in a vacuum chamber with the help of the hot wall/solid phase epitaxy and the evaporation is preceded by the annealing of the aforementioned silicon substrate in chamber in high vacuum at 610° C during 10 minutes
    20185973 prh 19-11-2018
    Near infrared detector converting infrared radiation into electric signal operating at room temperature and based on a photodiode composed of inorganic semiconductor silicon layer and organic layer, as well as metallic aluminum electrodes, which form electrical contacts between the heterojunction and the external electrical circuit is characterized in that the device a layered structure, where the inorganic and organic layers constitute a hybrid heterojunction, which contains an organic semiconductor material belonging to the functionalized indigoid group, with the LUMO energy level below -4 eV. The heterojunction is made of a layer of 6,6- dinitroindigo deposited onto a silicon substrate. It also beneficial to use indigoids with the substituent groups in the aromatic rings belonging to the nitro or cyanide groups.
    The advantage of the present invention is in using new organic compounds functionalized dyes from the indigoid groups (in particular for example 6,6’-dicyanoindigo or 6,6’-dinitroindigo) in the process of manufacturing the hybrid near infrared photodetector based on the silicon-organic material heterojunction. The invention is characterized in that it used as the organic semiconductor material functionalized dyes from the indigoid group with the LUMO energy level below -4eV.
    By using the functionalized dyes from the indigoid group with the LUMO energy level below -4eV it is possible to obtain advantageous photodetector sensitivity when illuminated with infrared radiation (higher photocurrent values, better sensitivity).
    The subject of the invention is shown in an example embodiment in the drawing, which presents structure of indigo functionalized by introduction of substituent groups into the aromatic rings in the dye structure. R1 denotes the substituent groups, which allow obtaining a compound with the LUMO energy level below -4eV. In particular, Ri groups can be for example cyan -CN group or nitro -NO2 group.
    An example embodiment of the present invention:
    The near infrared detector is fabricated by depositing a layer of the new organic compound onto a silicon substrate in the Hot Wall epitaxy in a vacuum chamber, preceded by annealing of the substrate in reduced pressure at 610°C temperature for 10 minutes. Aluminum electrical contacts are made in the vacuum sputterer for metals - the bottom contacts directly onto the silicon substrate, whereas the top contacts onto the deposited organic layer. As an effect of the fabrication, the device has a layered structure, where the inorganic and organic layers form a hybrid heterojunction which is the basis of the photodetector operation and the aluminum contacts enable connecting the layers with an electrical circuits.
    The described device enables detecting of the infrared light at room temperature thanks to the absorption phenomenon in the described heterojunction. The device can be used as an infrared detector in fiber optic communications, in sensors or in quality control of various chemical compounds. Since the device is based on a silicon substrate it can be integrated with electronic integrated circuits.
    权利要求:
    Claims (4)
    [1] 1. Near infrared photodetector converting infrared radiation into electrical signal, operating at room temperature and utilizing photodiode composed of inorganic semiconductor silicon later and organic layer, as well as metallic aluminum electrodes, constituting electrical contacts between the heterojunction and an external electrical circuit, characterized in that the device has a layered structure, in which the inorganic and organic layers form a hybrid heterojunction which contains organic semiconductor material belonging to functionalized dyes from the indigoid group with the LUMO energy level below -4 eV.
    [2] 2. The detector of claim 1, wherein the heterojunction is made of a layer of 6,6’-dicyanoindigo deposited onto the silicon substrate.
    [3] 3. The detector of claim 1, wherein the heterojunction is made of a layer of 6,6’-dinitromdigo deposited onto the silicon substrate.
    [4] 4. The detector of claim 1, wherein it is beneficial when the indigoids with the substituent groups in the aromatic rings belonging to the nitro or cyanide groups.
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    同族专利:
    公开号 | 公开日
    SE1851428A1|2020-02-01|
    GB2587595A|2021-04-07|
    AT521544A3|2020-09-15|
    WO2020027670A1|2020-02-06|
    LU101004B1|2020-06-24|
    AT521544A2|2020-02-15|
    LU101004A1|2020-02-27|
    PL426520A1|2020-02-10|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US20100140661A1|2007-08-23|2010-06-10|Gebhard Matt|Apparatus for converting of infrared radiation into electricalcurrent|
    EP2816625A1|2013-06-21|2014-12-24|Inphotech Sp. z o.o. |Device capable of transforming infrared radiation into electrical current or electrical voltage, working at room temperature, and a method of fabrication of the said device|
    AT516109A1|2014-07-29|2016-02-15|Universität Linz|Optoelectronic infrared sensor|
    KR20170136393A|2016-06-01|2017-12-11|김일구|Indigo based organic bulk heterojunction photodetectors|
    法律状态:
    2021-06-17| MM| Patent lapsed|
    优先权:
    申请号 | 申请日 | 专利标题
    PL426520A|PL426520A1|2018-07-31|2018-07-31|Near infrared detector|
    PCT/PL2018/000107|WO2020027670A1|2018-07-31|2018-11-08|Near infrared detector|
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